1/5 XP161A1265PR-g power mosfet products package order unit XP161A1265PR sot-89 1,000/reel XP161A1265PR-g (*) sot-89 1,000/reel parameter symbol ratings units drain-source voltage vdss 20 v gate-source voltage vgss 12 v drain current (dc) id 4 a drain current (pulse) idp 16 a reverse drain current idr 4 a channel power dissipation * pd 2 w channel temperature tch 150 storage temperature tstg -55~150 general description the XP161A1265PR-g is an n-channel power mosfet with low on-sta te resistance and ultra high-speed switching characteristics. because high-speed switching is possible, the ic can be efficiently set thereby saving energy. a gate protect diode is built-i n to prevent static damage. the small sot-89 package makes high density mounting possible. applications notebook pcs cellular and portable phones on-board power supplies li-ion battery systems features low on-state resistance : rds(on)=0.055 @ vgs=4.5v : rds(on)=0.095 @ vgs=2.5v ultra high-speed switching gate protect diode built-in driving voltage : 2.5v n-channel power mosfet dmos structure small package : sot-89 environmentally friendly : eu rohs compliant, pb free pin configuration/ marking product name a bsolute maximum ratings equivalent circuit ta = 2 5 * when implemented on a ceramic pcb etr1123_003 g : gate s : source d : drain 1 1 2 x (*) the ?-g? suffix denotes halogen and antimony free as well as being fully rohs compliant. * x represents production lot number.
2/5 XP161A1265PR-g parameter symbol conditions min. typ. max. units drain cut-off current idss vds=20v, vgs= 0v - - 10 a gate-source leak current igss vgs= 12v, vds= 0v - - 10 a gate-source cut-off voltage vgs(off) id= 1ma, vds= 10v 0.7 - 1.4 v id= 2a, vgs= 4.5v - 0.042 0.055 drain-source on-state resistance*1 rds(on) id= 2a, vgs= 2.5v - 0.070 0.095 forward transfer admittance*1 | yfs | id= 2a, vds= 10v - 8 - s body drain diode forward voltage vf if= 4a, vgs= 0v - 0.85 1.1 v parameter symbol conditions min. typ. max. units input capacitance ciss - 320 - pf output capacitance coss - 190 - pf feedback capacitance crss vds= 10v, vgs=0v f= 1mhz - 80 - pf parameter symbol conditions min. typ. max. units turn-on delay time td (on) - 10 - ns rise time tr - 15 - ns turn-off delay time td (off) - 55 - ns fall time tf vgs= 5v, id=2a vdd= 10v - 40 - ns parameter symbol conditions min. typ. max. units thermal resistance (channel-ambience) rth (ch-a) implement on a ceramic pcb - 62.5 - /w electrical characteristics dc characteristics t a = 25 *1 effective during pulse test. t a = 25 t a = 25 switching characteristics thermal characteristics dynamic characteristics
3/5 XP161A1265PR-g typical performance characteristics
4/5 XP161A1265PR-g typical performance characteristics (continued) (11) standardized transition ther mal resistance vs. pulse width
5/5 XP161A1265PR-g 1. the products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. consult us, or our representatives before use, to confirm that the inform ation in this catalog is up to date. 2. we assume no responsibility for any infri ngement of patents, pat ent rights, or other rights arising from the use of any info rmation and circuitry in this catalog. 3. please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this catalog. 4. the products in this catalog are not developed, designed, or approved for use with such equipment whose failure of malfunction ca n be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. please use the products listed in this catalog within the specified ranges. should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. we assume no responsibility for damage or loss due to abnormal use. 7. all rights reserved. no part of this ca talog may be copied or reproduced without the prior permission of torex semiconductor ltd.
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